Volume 18, Issue 49 (No.3&4-صفحات انگلیسی از 123 تا 140 2006)                   2006, 18(49): 471-479 | Back to browse issues page

XML Persian Abstract Print


Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Porous Silicon as oxygen sensor. Journal title 2006; 18 (49) :471-479
URL: http://jsci.khu.ac.ir/article-1-1170-en.html
Abstract:   (4373 Views)
In this research work, porous silicon is made by using chemical method. Depending upon H.F density, the amount of porosity of silicon will change. Then an ohmic aluminium contact and gold contact on the porous side of silicon is made. I-V characteristics were plotted for different devices. Experimental results show that these devices are very sensitive with oxygen, so we can use these devices as oxygen sensor.
Full-Text [PDF 817 kb]   (1863 Downloads)    

Published: 2006/11/15

Add your comments about this article : Your username or Email:
CAPTCHA

Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

© 2024 CC BY-NC 4.0 | Quarterly Journal of Science Kharazmi University

Designed & Developed by : Yektaweb